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SUMMARY:WW-Kolloquium: NV color centers in isotopically-controlled CVD
 -diamond for quantum technologies
UID:6265-d0df-d51d-20180878@www.fau.de
DESCRIPTION:Christoph Findler CTO\, Diatope GmbH “NV color centers i
 n isotopically-controlled CVD-diamond for quantum technologies” Diam
 ond has always been fascinating for humanity\, either as gemstones wit
 h brilliant colors or as one of the most durable materials for mechani
 cal tools and coatings. During the last decades\, both the color in fo
 rm of impurities and the hardness of diamond turned out to be attracti
 ve also for quantum technologies. Until today a multitude of optically
  active diamond defects has been found and many of them have been iden
 tified in terms of structure and composition. The impurities with opti
 cal absorption in the visible wavelength spectrum can color diamond an
 d are therefore called color centers. The most studied color center in
  diamond is the negatively charged nitrogen vacancy center (NV). Consi
 sting of a carbon vacancy and an adjacent substitutional nitrogen impu
 rity\, it is an atomic defect. The NV center is paramagnetic and carri
 es in its negative charge state a S = 1 electron spin with coherence t
 imes up to milliseconds even at room temperature. The high stability a
 t ambient conditions makes bulky equipment like cryostats or vacuum pu
 mps unnecessary and enables therefore real-world quantum applications 
 outside the laboratory. As a consequence\, NV centers in synthetic sin
 gle-crystalline diamond are a promising and emerging platform for quan
 tum sensing technologies. The realization of such solid-state based qu
 antum sensors is widely studied and requires reproducible manufacturin
 g of NV centers with controlled spin properties\, including the spin b
 ath environment within the diamond crystal. Here\, together with an in
 troduction to NV quantum sensing the key parameters of NV diamonds are
  discussed to achieve magnetic field sensitivities down to the picotes
 la range. The resulting material requirements are then translated into
  the necessary fabrication steps involving plasma-assisted chemical va
 por deposition of isotopically purified diamond and the
DTSTART:20241210T160000Z
DTEND:20241210T180000Z
LOCATION:H14 / Zoom
DTSTAMP:20260422T051753Z
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